| Ability Summary:
er chemical and physical etching and depositing process.
work theory and structure of vacuum，Such as FCVA，IBO,IBD,Vecco,Shimazu etc.
lfully master some apparatus with checking up property of thin film (such as SEM, Woollam, AFM, XPS, Roman XRD, TEM and AES etc)
the basic knowledge of electronic productions; know about related technology flow.
ues 6Sigma in the actual work，familiar with SPC、DOE、FMEA etc.
yse and solve the issue in the development process.
gn the expreiment by myself, and finish the porject report.
ability of English reading, writing and hearing
lfully use office,AutoCAD & Notes software。
Responsible project:
45 deg: Previously, SAE use primarily CA 0 deg to deposit Si/DLC thin film. But, with decreasing of thin film thickness, if going on taking CA 0 deg, thickness of step area is smaller than plate area, which will lead to bad coverage. In order to improve coverage of thin film, SAE developed CA 45 deg process.
process In order to pledge slider stable fly in high altitude, OC must be smaller than 5nm. Previously, SAE use primarily IBE to pledge value of OC. But, an obvious defect will produce if using IBE process; namely, slider will have big lead recess. In order to meet value of OC and pledge small lead recess, SAE developed FCE process.
project: In order to improve efficient and weld property of HGA process, meanwhile, a preparation for 10% slider, the FMS project produced. I take charge in developing insulator and lead layer in FMS project. |
